| Session 7:
Poly-Si TFTs (Active-Matrix Devices) |
|
Tuesday, May 22 / 10:50 am - 12:10 pm / Ballroom A |
|
Chair: Fujio
Okumura, NEC Corp. |
|
Co-Chair: Hyun
Jae Kim, Yonsei University |
|
7.1: |
Invited Paper:
LTPS Processes for
AMLCD and AMOLED Applications
Norbert Fruehauf, University of Stuttgart, Stuttgart, Germany |
|
7.2: |
Realization of Six-Mask LTPS CMOS
Panel for AMLCD Applications
Soo-Jeong Park, LG.Philips LCD, Kyunggi-do, Korea |
|
7.3: |
Gaint-Grain Poly-Si by CW Laser
Annealing of a-Si with Cylindrical Microlens Array
Jin Jang, Kyung Hee University, Seoul, Korea |
|
7.4: |
A 2.4-in. VGA LCD by CW-Laser Lateral
Crystallization Poly-Si TFTs with Excellent TFT Uniformity
Yasuyuki Ogawa, Sharp Corp., Nara, Japan
|
| Session 18:
LCD TV (Active-Matrix Devices) |
|
Wednesday, May 23 / 9:00 - 10:20 am / Ballroom A |
|
Chair:
John Zhong, Apple Computer
|
|
Co-Chair: Willem
Den Boer, ScanVue Technologies LLC
|
|
18.1: |
Distinguished
Paper: Novel TFT-LCD Technology for
Motion-Blur Reduction Using 120-Hz Driving with Motion-Compensated
Frame Interpolation (McFi)
Sang Soo Kim, Samsung Electronics Co., Ltd., Chungnam-do, Korea |
|
18.2: |
MVA-LCD with Low Color Shift and High
Image Quality
Meng-Chieh Tai, Chunghwa Picture Tubes Ltd., Taoyuan, Taiwan |
|
18.3: |
Additional Refresh Technology (ART) of
Advanced-MVA (AMVA) Mode for High-Quality LCDs
Yi-Pai Huang, National Chiao Tung University, Hsinchu, Taiwan |
|
18.4: |
Novel Gamma-Correction Method Using an
Advanced Capacitive Coupling Driving
Takanori Tsunashima, Toshiba Matsushita Display Technology Co.,
Ltd., Saitama, Japan
|
| Session 24:
AMLCDs Integrated with Sensors (Active-Matrix Devices) |
|
Wednesday, May 23 / 10:40 am - 12:00 pm / Ballroom A |
|
Chair:
Kalluri R. Sarma, Honeywell, Inc.
|
|
Co-Chair:
Feng-Yuan Gan, AU Optronics Corp.
|
|
24.1: |
A 2-in. a-Si:H TFT-LCD with Backlight-Controled
TFT Sensors
Jin Jang, Kyung Hee University, Seoul, Korea |
|
24.2: |
A 1300-dpi Optical Image Sensor Using
an a-Si:H Photodiode Array Driven by LTPS TFTs
Tsukasa Eguchi, Seiko-Epson Corp., Nagano, Japan |
|
24.3: |
Hybrid Touch-Screen-Panel Integrated
in TFT-LCDs
Joohyung Lee, Samsung Electronics Co., Ltd., Kyunggi-do, Korea |
|
24.4: |
Optical-Sensor-Embedded Input Display
Usable under High-Ambient Lighting Conditions
Hirotaka Hayashi, Toshiba Matsushita Display Technology Co., Ltd.,
Saitama Japan
|
| Session 35:
Mobile Display Devices (Active-Matrix
Displays)
|
|
Wednesday, May 23 / 5:10 - 6:40 pm / Ballroom A |
|
Chair:
Sang Soo Kim, Samsung Electronics Co., Ltd.
|
|
Co-Chair:
Man Wong, Hong Kong University of Science & Technology
|
|
35.1: |
Invited Paper:
Advanced Technologies
Based on a-Si or LTPS TFT for High-Performance Mobile Displays
Myung-Koo Kang, Samsung Electronics Co., Ltd., Kyunggi-do, Korea
|
|
35.2: |
Development of 3-in. VGA LCD for DSC
Ho Suk Maeng, Samsung Electronics Co., Ltd., Kyunggi-do, Korea
|
|
35.3: |
A Transflective In-Plane-Switching LCD
with a Higher-Optical-Performance Reflective Area
Norio Koma, Sanyo Epson Imaging Devices Corp., Gifu, Japan
|
|
35.4: |
Novel Transflective LCD with
Micro-Lens Arrays to Double the Brightness
Takashi Sato, Sharp Corp., Tenri, Japan
|
|
35.5L: |
Late-News
Paper: A Direct-View MEMS Display for Mobile
Applications
Mark Halfman, Pixtronix, Inc., Andover, MA, U.S.A.
|
| Session 41:
Poly-Si AMOLEDs (Active-Matrix Displays) |
|
Thursday, May 24 / 9:00 - 10:20 am / Ballroom A |
|
Chair:
Hyun Jae Kim, Yonsei University
|
|
Co-Chair:
Man Wong, Hong Kong University of Science & Technology
|
|
41.1: |
Invited Paper: LTPS Technology for Improving the
Uniformity of AMOLEDs
Soon-Kwang Hong, LG.Philips LCD, Gyungsangbuk-do, Korea |
|
41.2: |
Micro Silicon Technology for AMOLED Displays
Toshiaki Arai, Sony Corp, Kanagawa, Japan |
|
41.3: |
A Low-Power AMOLED Microdisplay with Ultra-High
Pixel Density and Extended
Operating Temperature Range
Ihor Wacyk, eMagin Corp., Hopewell Junction, NY, U.S.A. |
|
41.4: |
AMOLED Based on Silicon-on-Glass (SOG)
Technology
Jae Beom Choi, Samsung Electronics Co., Ltd., Kyunggi-do, Korea
|
| Session 46:
AMLCDs with Integrated Scanners (Active-Matrix Devices) |
|
Thursday, May 24 / 10:40 - 11:40 am / Ballroom A |
|
Chair:
Norbert Fruehauf, University of Stuttgart
|
|
Co-Chair:
Roger G. Stewart, Sourland Mountain
Associates
|
|
46.1: |
Invited Paper: Integrated a-Si:H TFT Gate-Driver
Circuits on Large-Area TFT-LCDs
Seung-Hwan Moon, Samsung Electronics, Asan, Korea |
|
46.2: |
Invited Paper: High-Performance LTPS
Technologies for Advanced Mobile-Display Applications
Hiroyuki Ohshima, Toppoly Optoelectronics Corp., Miao-Li County,
Taiwan |
|
46.3: |
DRAM-Frame-Memory Embedded SOG LCD
Hiroshi Haga, NEC LCD Technologies, Ltd., Kanagawa Japan
|
| Session 52:
a-Si AMOLEDs (Active-Matrix Devices) |
|
Thursday, May 24 /
2:00 - 3:00 pm / Ballroom A |
|
Chair:
Takatoshi Tsujimura, Kodak Japan, Ltd.
|
|
Co-Chair:
Mike
Hack, Universal Display Corp.
|
|
52.1: |
System Design for a Wide-Color-Gamut TV-Sized
AMOLED Display
John Hamer, Eastman Kodak Co., Rochester, NY, U.S.A. |
|
52.2: |
A Low-Cost Stable a-Si AMOLED Display with Full
VT-Shift and VOLED-Shift Compensation
Gholamreza Chaji, IGNIS Innovation, Inc., Waterloo, Ontario,
Canada |
|
52.3: |
A 2.2-in. qqVGA AMOLED Driven by a-Si:H TFT with
Active Layer Deposited at Room Temperature
Ji Sim Jung, Samsung Advanced Institute of Technology, Kyunggi-do,
Korea
|
| Session 58:
Flexible Active-Matrix Displays (Active-Matrix Devices) |
|
Thursday, May 24 /
3:40 - 5:10 pm / Ballroom A |
|
Chair:
Norbert
Fruehauf, University of Stuttgart
|
|
Co-Chair:
Feng-Yuan Gan, AU Optronics Corp.
|
|
58.1: |
Invited Paper: TFT Technology for Flexible
Displays
Chang-Dong Kim, LG.Philips LCD, Kyunggi-do, Korea |
| 58.2: |
Invited Paper: Suftla Flexible Microelectronics
on Their Way to Business
Mitsutoshi Miyasaka, Seiko-Epson Corp., Nagano, Japan |
|
58.3: |
A 7-in. Color VGA Flexible TFT-LCD on Colorless
Polyimide Substrate with 200°C a-Si:H TFTs
Yung-Hui Yeh, ITRI, Hsinchu, Taiwan |
|
58.4: |
Invited Paper: Flexible Displays Made in TFT-LCD
Facilities by the EPLaRTM Process
Ian French, Philips Research Laboratory, Redhill, Surrey, U.K.
|
|
58.5L: |
Late-News
Paper: 14.3 inch Active Matrix-Based Plastic
Electrophoretic Display Using Low Temperature Processes
Seong-Sik Shin, Samsung Electronics, Yongin-si, Korea
|
| Session 63:
Organic TFTs (Active-Matrix Devices) |
|
Friday, May 25 /
9:00 - 10:10 am / Ballroom A |
|
Chair:
Roger G. Stewart, Sourland Mountain Associates
|
|
Co-Chair:
John Zhong, Apple Computer
|
|
63.1: |
Active-Matrix Backplane with Printed Organic
TFTs for Electrophoretic Displays
Hiroki Maeda, Dai Nippon Printing Co., Ltd., Chiba, Japan |
|
63.2: |
Distinguished
Paper: A Full-Color Top-Emission AMOLED Display Driven
by OTFTs
Iwao Yagi, Sony Corp., Kanagawa, Japan |
|
63.3: |
High-Resolution OTFT-OLEDs on Plastic Substrates
Using Self-Organized Process
Jin Jang, Kyung Hee University, Seoul, Korea
|
|
63.4L: |
Late-News
Paper: High Mobility Solution-Processed Organic
Thin-Film Transistor Array for Active-Matrix Color Liquid Crystal
Displays
Masahiro Kawasaki, Hitachi, Ltd, Hitachi, Ibaraki Japan
|
| Session 68:
Transparent TFTs (Active-Matrix Devices) |
|
Friday, May 25 /
10:40 - 11:40 am / Ballroom A |
|
Chair:
Mike
Hack, Universal Display Corp.
|
|
Co-Chair:
Takatoshi Tsujimura, Kodak Japan, Ltd.
|
|
68.1: |
Invited Paper: Transparent Electronics:
Display Applications?
John Wager, Oregon State University, Corvallis, OR, U.S.A. |
|
68.2: |
A 3.5-in. QCIF+ AMOLED Panel Based on an Oxide
TFT Backplane
Ho Nyun Lee, LG Electronics, Seoul, Korea |
|
68.3: |
Invited Paper: Transparent Amorphous
Oxide Semiconductors for High-Performance TFTs
Hideo Hosono, Tokyo Institute of Technology, Yokohama, Japan
|
| Poster Session |
Tuesday, May 22 / 4:00 - 7:00 pm / Exhibit Hall A
|
| Active-Matrix
Devices |
|
P.1: |
The Coupled Black-Image-Insertion Array Pixel
Design for the OCB-LCD TV
Chih-Chieh Wang, Chunghwa Picture Tubes, Ltd., Taoyuan, Taiwan |
|
P.2: |
Photosensitive Organic Passivation TFTs with High
Anti-Water Absorption Ability
Hsin-Hua Pan, AU Optronics Corp., Hsinchu, Taiwan |
|
P.3: |
Laser-Assisted ITO Lift-Off for TFT Fabrication
Kuo Lung Fang, AU Optronics Corp., Hsinchu, Taiwan |
|
P.4: |
Metal Contact Improvement in Cu-Gate TFT-LCDs
Wen Ching Tsai, AU Optronics Corp., Hsinchu, Taiwan |
|
P.5: |
Solution-Processed SiO2 Films Using Hydrogenated
Polysilane-Based Liquid Materials
Hideki Tanaka, Seiko-Epson Corp., Nagano, Japan |
|
P.6: |
Top- and Bottom-Gate Amorphous ZnO Transparent TFTs
Fabricated by All-Etching Processes
Chung-Chih Wu, National Taiwan University, Taipei, Taiwan |
|
P.7: |
An a-Si TFT-LCD
with an Embedded Color Image Scanner
Jun-Hyeok Yu, LG.Philips LCD, Kyunggi-do, Korea |
|
P.8: |
a-Si:H TFT-LCDs with a Single Organic Passivation
Layer
Young-il Kim, Samsung Electronics Co., Ltd., Kyunggi-do, Korea |
|
P.9: |
Unified Model and Prediction Technique for
On-Current Degradation Caused by Drain-Avalanche Hot Carriers in
LTPS TFTs
Tetsufumi Kawamura, Hitachi, Ltd., Tokyo, Japan |
|
P.10: |
Transparent OTFTs with Color-Filtering Functional
Gate Insulators
Chiao Shun Chuang, National Chiao Tung University, Hsinchu, Taiwan |
|
P.11: |
Analysis of Low-Power-Consumption AMOLED Displays
on Flexible Stainless-Steel Substrates
Mike Hack, Universal Display Corp., Ewing, NJ, U.S.A. |
|
P.12: |
Enhanced Pentacene OTFTs with Suspended Source /
Drain Electrode
Min-Koo Han, Seoul National University, Seoul, Korea |
|
P.13: |
Low-Power a-Si Level Shifter for Mobile Displays
with Bootstrapped Capacitor and Pulsed Signal Source
Min-Koo Han, Seoul National University, Seoul, Korea |
|
P.14: |
a-Si Robust Gate Driver for 7.0-in. WVGA LCD Panel
Hung-Chun Chen, Electronics and Optoelectronics Research
Laboratories (EOL) Industrial Technology, Hsinchu, Taiwan |
|
P.15: |
AMOLED Pixel Structures Compensating the Hysteresis
of Poly-Si TFTs
Myoung-Hoon Jung, POSTECH, Pohang, Korea |
|
P.16: |
Solution-Processed Zinc Oxide TFTs
David Levy, Eastman Kodak Co., Rochester, NY, U.S.A. |
|
P.17: |
Metal-Induced Continuous Zonal Domain poly-Si TFTs
Hoi-Sing Kwok, Hong Kong University of Science & Technology,
Kowloon, Hong Kong |
|
P.18: |
Improvement of Stability in ZnO TFTs Under Bias Stress
Chi-Sun Hwang, ETRI, Daejon, Korea |
|
P.19: |
Investigation of Deposition-Rate Effects on the
Current-Voltage Characteristics of Organic Dynamic- Random-Access
Bistable Devices
Tzu Yueh Chang, National Chiao Tung University, Hsinchu, Taiwan |
|
P.20: |
Highly integrated 10.2-in. WVGA LTPS-LCD Manufactured by
PMOS Process
Wei-Cheng Chen, TPO Displays Corp., Miao-Li County, Taiwan |
|
P.21: |
Jet-Printed All-Additive Active-Matrix Pixel Circuits on
Low-Temperature Flexible Substrates
Jurgen Daniel, Palo Alto Reseach Center, Palo Alto, CA, U.S.A. |
|
P.22: |
Single-Grain Si TFTs and Circuits for Flexible Electronics
and 3-D ICs
Ryoichi Ishihara, Delft University of Technology, Delft, The
Netherlands |
|
P.23: |
Design Parameters for Using Charging Technique for TFT-LCDs
Do-Sung Kim, LG.Philips LCD, Kyungbuk-do, Korea |
|
P.24: |
Design of Low-Cost 2.2-in. qVGA LTPS TFT-LCD Panel
Oh-Kyong Kwon, Hanyang University, Seoul, Korea |
|
P.25: |
Power-Consumption Characteristics and Simulation of LCD
Panels
Injae Hwang, Samsung Electronics Co., Ltd., Asan, Korea |
|
P.26: |
Advanced TFT-LCD Pixel Structure for High Aperture Ratio
Sang Yong Noh, Samsung Electronics Co., Ltd., Chungcheongnam-do,
Korea |
|
P.27: |
Anomalous Increased Drain-Current Characteristics of a-Si:H
TFTs with Long Channel Width
Sung Hun Jin, Samsung Electronics Co., Ltd., Asan, Korea |
|
P.28: |
Flexibility Study of High-Performance LTPS TFTs on Flexible
Metal Foil
Jin Jang, Kyung Hee University, Seoul, Korea
|
|
P.194L: |
Late-News
Poster: High-Frequency Performance of Sub-micrometer
Channel-Length Si TFTs Fabricated on Large Grain Poly-Si Films
Genshiro Kawachi, ALTEDEC, Yokohama, Japan
|
|
P.195L: |
Late-News
Poster: A High-Resolution LTPS AMLCD with Integrated
8-bit DAC
Kazuyuki Hashimoto, TPO Displays Japan K.K., Kobe, Japan
|
|
P.196L: |
Late-News
Poster: High-Performance Zinc Oxide Transistors by an
Ambient Process
David Levy, Eastman Kodak Co., Rochester, NY USA
|
|
P.197L: |
Late-News
Poster: Demonstration of High Performance TFTs on
Silicon-on-Glass (SiOG) Substrate
Carlo Kosik Williams, Corning Incorporated, Corning, NY USA
|
|
P.198L: |
Late-News
Poster: Integrated Ambient Light Sensors in LTPS AMLCDs
Fumirou Matsuki, TPO Displays Corp., Kobe, Japan
|
|
P.199L: |
Late-News
Poster: Silicon Nanocrystals Photo Sensor Integrated on
Low-Temperature Polycrystalline-Silicon Panels
An-Thung Cho, AUO Technolo gy Center, AU Optronics Corporation,
Hsinchu, Taiwan
|
